Impact of temperature on the DC performance of Nanosheet TFET

Abstract

In this article, a comparative analysis of vertically stacked nanosheet field effect transistor (VSN-FET) with vertically stacked nanosheet tunnel field effect transistor (VSN-TFET) is done. VSN-FET is doped with N-I-N, while VSN-TFET uses a P-I-N configuration. VSN-TFET has a reduced leakage current of 1.17E-16A compared to VSN-FET's OFF current (4.53E-11A). VSN-TFET has an incredible switching ratio of 9.38E+11, while VSN-FET possesses a meagre switching ratio of 8.05E+06. The VSN-TFET structure ameliorates subthreshold swing (SSw) by 69.43 percent compared to the VSN-FET. Additionally, the temperature evaluation of the VSN-TFET is performed. The device's performance is examined at temperatures ranging from 200 to 400 kelvin. The results demonstrate that the temperature dependency of ON-current is minimal, but it rises in the OFF-state domain. The effect of temperature on subthreshold swing, DIBL, and total gate capacitance has been analysed. All the simulations have been carried out using the Visual TCAD tool.