The effect of ground bond-wire on the performance of CMOS class-E power amplifiers

Abstract

The effect of the ground bond-wire inductance on the performance of class-E power amplifiers is analyzed and investigated. It is shown that for a given supply voltage and output power, this inductance decreases the value of the series excessive reactance and the voltage stress on the active device. The simulation results of a quasi-ideal circuit and a CMOS circuit in presence of a typical ground bond-wire inductance of 1 nH are presented to validate the analysis.