Research on single event latch-up effect of CMOS based on TCAD

Abstract

Complementary metal oxide semiconductor (CMOS) is widely used in high reliability field, and is susceptible to single event latch-up (SEL) effect. Based on Technology Computer Aided Design (TCAD) simulation software, a typical CMOS structure is selected to simulate SEL effect and study the simulation results under different conditions. The relation between the simulation condition and the simulation result is concluded. The instructions for SEL-reinforcement design and applications of the CMOS components are obtained to improve the design reliability.