Residual defects in SIMOX: threading dislocations and pipes

1990 IEEE SOS/SOI Technology Conference. Proceedings Pub Date : 1990-10-02 DOI:10.1109/SOSSOI.1990.145758

P. Roitman, M. Edelstein, S. Krause, S. Visitserngtrukul

引用次数: 8

Abstract

Some techniques are discussed for monitoring dislocations and stacking faults in SIMOX (separation by implantation of oxygen) films. Also, a different type of defect, a silicon pipe running through the buried oxide, has been observed. The origin of these defects and a technique for detecting them are described.<>

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SIMOX的残留缺陷:螺纹错位和管道

讨论了SIMOX(氧注入分离)薄膜中位错和层错的监测技术。此外，还观察到另一种类型的缺陷，即穿过埋藏氧化物的硅管。描述了这些缺陷的起源和检测它们的技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1990 IEEE SOS/SOI Technology Conference. Proceedings

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