Modeling and characterization studies of parasitic elements in lead-on-chip thin-small-outline packaging

Pak-Hong Yee, Siu-Waf Low, Y. Swee
{"title":"Modeling and characterization studies of parasitic elements in lead-on-chip thin-small-outline packaging","authors":"Pak-Hong Yee, Siu-Waf Low, Y. Swee","doi":"10.1109/IEMTIM.1998.704661","DOIUrl":null,"url":null,"abstract":"Parameters affecting the parastic elements of a lead-on-chip (LOC) thin small outline package (TSOP) were studied by modeling with a TI internal RLC extractor and measurement technique using a vector network analyzer (VNA). Variation in the resistance (R), inductance (L) and capacitance (C) of a TSOP with respect to changes in the lead dimensions were assessed by modeling with a line-and-space pattern based on the TSOP geometry. The effect on RLC due to changes in the lead-to-ground separation, electrical properties of the materials and frequency were assessed by modeling based on a 54-pin TSOP applied to 64 Mb/spl times/16 SDRAM. Measurement was made to confirm the frequency dependence of RLC for Alloy42 (A42), copper (Cu) and palladium plated copper (Pd-Cu) as leadframe material. Some fundamentals for packaging design are summarized. For instance, L can be reduced by increasing lead width and decreasing lead-to-ground separation simultaneously. In frequency studies, it is found that the A42 leadframe has a higher frequency dependence on R and L, and is thus electrically inferior to Cu and Pd-Cu leadframes.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMTIM.1998.704661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Parameters affecting the parastic elements of a lead-on-chip (LOC) thin small outline package (TSOP) were studied by modeling with a TI internal RLC extractor and measurement technique using a vector network analyzer (VNA). Variation in the resistance (R), inductance (L) and capacitance (C) of a TSOP with respect to changes in the lead dimensions were assessed by modeling with a line-and-space pattern based on the TSOP geometry. The effect on RLC due to changes in the lead-to-ground separation, electrical properties of the materials and frequency were assessed by modeling based on a 54-pin TSOP applied to 64 Mb/spl times/16 SDRAM. Measurement was made to confirm the frequency dependence of RLC for Alloy42 (A42), copper (Cu) and palladium plated copper (Pd-Cu) as leadframe material. Some fundamentals for packaging design are summarized. For instance, L can be reduced by increasing lead width and decreasing lead-to-ground separation simultaneously. In frequency studies, it is found that the A42 leadframe has a higher frequency dependence on R and L, and is thus electrically inferior to Cu and Pd-Cu leadframes.
片上铅薄型小轮廓封装中寄生元件的建模与表征研究
采用TI内部RLC提取器和矢量网络分析仪(VNA)测量技术,研究了影响片上铅(lead-on-chip, LOC)薄小轮廓封装(TSOP)塑性元件的参数。TSOP的电阻(R)、电感(L)和电容(C)随引线尺寸变化的变化通过基于TSOP几何形状的线-空模式建模来评估。通过基于54引脚TSOP应用于64 Mb/spl次/16 SDRAM的建模,评估了引线到地分离、材料电性能和频率变化对RLC的影响。测定了42合金(A42)、铜(Cu)和镀钯铜(Pd-Cu)作为引线框材料时RLC的频率依赖性。总结了包装设计的一些基本原理。例如,L可以通过同时增加引线宽度和减少引线到地的分离来减小。在频率研究中,我们发现A42引线框对R和L有更高的频率依赖性,因此在电性能上不如Cu和Pd-Cu引线框。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信