Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

Abstract

A thin barrier-enhancement region on quantum well InGaAs/InAlAs MSM photodetector is incorporated in between the two-dimensional quantum channel and the three-dimensional metal contact. One-dimensional and uniform strong electric field throughout the transport direction in the quantum channel is obtained by contacting this quantum channel laterally. This region is modeled by a quantum mechanical boundary condition in the numerical carrier transport simulation. Effects of this thin boundary on InGaAs/InAlAs MSM photodetector dark and transient current responses are presented.