Si3N4 Manifold Microchannels Cooling System for High Heat Flux Electronic Applications

Yue Qiu, Chirag R. Kharangate, Jennifer L. W. Carter, J. McGuffin-Cawley
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Abstract

The increasing energy dissipation in more compact and powerful electronic systems has led to extreme high heat fluxes which call for more effective thermal management solutions. [1] One innovative cooling strategy to meet the dissipation demand is two-phase cooling utilizing manifold-microchannels, it can achieve high heat transfer while maintaining low pressure drops in comparison to conventional two-phase microchannels. For electronics cooling in extreme environment, Si3N4-based ceramic is an ideal substrate due to its high thermal conductivity, low elastic modulus, and sufficient strength and toughness. In this study, a reduced order thermal-fluidic analysis of Si3N4 manifold-microchannel for two-phase boiling flows is conducted for dissipating up to 1 kW of heat from a 1 cm2 heated area on a compact Si3N4 sample. The effect of manifold-microchannel geometry parameters on pressure drop and heat resistance are investigated. The performances of different type of working fluids are also compared, including R134a, R1234yf, R1234ze(E), R245fa, and R1233zd, FC72, and HFE7100. The proposed manifold-microchannels with R134a as the working fluid can achieve low pressure drop ~20 kPa and low thermal resistance ~0.06 K/W with a mass flow rate requirement of 9~ 13 g/s for a heat flux of 1 kW/cm2.
用于高热流密度电子应用的Si3N4流形微通道冷却系统
越来越多的能量耗散在更紧凑和强大的电子系统导致极高的热通量,这需要更有效的热管理解决方案。[1]一种满足耗散需求的创新冷却策略是利用歧管微通道的两相冷却,与传统的两相微通道相比,它可以在保持低压降的同时实现高传热。对于极端环境下的电子冷却,si3n4基陶瓷具有高导热性、低弹性模量和足够的强度和韧性,是理想的衬底。在本研究中,对两相沸腾流动的氮化硅流管微通道进行了降阶热流体分析,以在致密的氮化硅样品上从1 cm2的加热区域消散高达1 kW的热量。研究了歧管-微通道几何参数对压降和热阻的影响。对比了R134a、R1234yf、R1234ze(E)、R245fa、R1233zd、FC72、HFE7100等不同工质的性能。所提出的以R134a为工质的管汇微通道,在热流密度为1 kW/cm2时,可以实现低压降~20 kPa,低热阻~0.06 K/W,质量流量要求为9~ 13 g/s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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