Zongming Duan, Xiaolan Tang, Q. Ma, Yuefei Dai, F. Lin
{"title":"A 1–4GHz CM OS receive front-end for digital array radars","authors":"Zongming Duan, Xiaolan Tang, Q. Ma, Yuefei Dai, F. Lin","doi":"10.1109/RFIT.2015.7377895","DOIUrl":null,"url":null,"abstract":"A 1-4GHz receive front-end is implemented in 0.18 μm CMOS technology for digital array radar applications. The front-end consists of broadband balun-LNA, down-conversion mixer, voltage gain control amplifier (VGA), differential-to-single driver (D-S Driver), LO driver and on chip temperature self-adaptive gain control circuit. The front-end achieves a gain range of 5-25 dB, a noise figure of 8.5dB, and an output P-1dB of 5.2 dBm. The gain difference is less than 1.2 dB within -55 ~ +85°C operating temperature across 1-4 GHz. The total power consumption is 150 mW, and the die area is 1.2 mm2 including pads.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 1-4GHz receive front-end is implemented in 0.18 μm CMOS technology for digital array radar applications. The front-end consists of broadband balun-LNA, down-conversion mixer, voltage gain control amplifier (VGA), differential-to-single driver (D-S Driver), LO driver and on chip temperature self-adaptive gain control circuit. The front-end achieves a gain range of 5-25 dB, a noise figure of 8.5dB, and an output P-1dB of 5.2 dBm. The gain difference is less than 1.2 dB within -55 ~ +85°C operating temperature across 1-4 GHz. The total power consumption is 150 mW, and the die area is 1.2 mm2 including pads.