Nanostructured materials for sensing and imaging

D. Zhang, C. Yan, X. Chen, Y. J. Jin, D. D. Li, H. Bian, Z. J. Xu, Y. Wang
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Abstract

From semiconductor quantum well structures to the currently hottest metamaterials, the conquest of nano-world has been occurring in almost every field of research. In the field of quantum well structures for infrared photodetection, the inclusion of dilute nitride layers in the mature GaAs based quantum well structures results in a TE dominate photocurrent and the incorporation of nitrogen in the narrow bandgap InSb materials makes it possible for wide band infrared absorption covering mid and long wavelength infrared range. With the nanostructured materials made of metal and dielectric composites, visible light can be manipulated, which has potential application for super resolution imaging beyond diffraction limit.
传感和成像用纳米结构材料
从半导体量子阱结构到目前最热门的超材料,纳米世界的征服几乎发生在每个研究领域。在用于红外光探测的量子阱结构领域,在成熟的GaAs基量子阱结构中加入稀氮化物层导致TE主导光电流,而在窄带隙的InSb材料中加入氮使得覆盖中长波长红外范围的宽带红外吸收成为可能。利用金属和介电复合材料制成的纳米结构材料,可以对可见光进行操纵,在超分辨成像中具有潜在的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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