Fabrication Of Silicon Quantum Dots On Oxide And Nitride

Abstract

11. Experimental Quantum dot fabrication was performed in a conventional low-pressure chemical-vapor deposition (LPCVD) reactor using 50% SiH, in helium as the source gas. The substrates used were 150" p-type (100) silicon wafers having either Si0,layer thermally grown by dry oxidation or Si,N, layer deposited by LPCVD. Several split experiments were carried out to evaluate the effect of substrate chemical treatment with 1% HF solution, the substrate film type, and deposition temperature. The average height and density of quantum dots were measured by AFM and top view SEM. The evaluation of substrate roughness was also carried out by AFM. The deposition temperature was varied from 600°C to 640°C and the deposition time was varied from 15sec to 90sec.