A new wideband modeling technique for deep sub-micron MOSFETs

Abstract

In this presentation, a new modeling technique to exactly describe the time-domain (TD) responses of deep sub-micron MOSFETs, which leads to wideband models. This new method is suitable for modeling of MOSFETs used in high-speed or switching type circuits. To meet the wideband requirement without any alteration on the DC bias condition, the equivalent circuit models incorporate BSIM3v3 during the modelling process.