Film uniformly in bond and etch-back silicon on insulator (BESOI)

Abstract

BESOI is made epitaxially growing a high-resistivity layer on a low-resistivity substrate, oxidizing the epilayer, and then thermally bonding a second oxidized wafer (the handle) onto the oxidized epilayer. The SOI film is then formed by etching the original substrate up to the epilayer, leaving the handle as the new substrate. The major incentive for using this technology is the thermal Si/SiO/sub 2/ interface between the SOI layer and the insulator. The author discusses briefly film thickness problems and the techniques whereby they can be minimized.<>