A precise model for the transient characteristics of power diodes

Abstract

A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25 degrees C-125 degrees C.<>