Silicon Power Diode Devices, Development and Future Prospects

Abstract

This paper describes the development of silicon power diodes from two aspects: single devices and composite devices. Single devices include Fast Recovery Diode, the combination of Schottky Barrier Diode and PN junction, MOS-based Super Barrier Rectifier and Buried Layer Rectifier. Composite devices include two novel integrated diodes-Charge Pump Switch and Cool Bypass Switch. This paper outlines the structure, principles, and applications of each power diode, and makes predictions about the future direction of power diodes at the end of the paper.