D. Harame, X. Wang, B. Jagannathan, J. Perkarik, J. Watts, D. Sheridan, P. Cottrell, D. Greenberg, G. Freeman, K. Newton, M. Graf, E. Mina, A. Joseph, J. Dunn
{"title":"Semiconductor technology choices for ultrawide-band (UWB) systems","authors":"D. Harame, X. Wang, B. Jagannathan, J. Perkarik, J. Watts, D. Sheridan, P. Cottrell, D. Greenberg, G. Freeman, K. Newton, M. Graf, E. Mina, A. Joseph, J. Dunn","doi":"10.1109/ICU.2005.1570078","DOIUrl":null,"url":null,"abstract":"UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems are system in a package. The low cost favors CMOS.","PeriodicalId":105819,"journal":{"name":"2005 IEEE International Conference on Ultra-Wideband","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Conference on Ultra-Wideband","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICU.2005.1570078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems are system in a package. The low cost favors CMOS.