T. Ohsugi, Y. Iwata, H. Ohyama, M. Okada, T. Ohmoto, Y. Unno, T. Kohriki, N. Tamura, H. Miyata, M. Higuchi, K. Niwa, M. Nakamura, Y. Nagashima, M. Daigo, A. Murakami, S. Kobayashi, K. Yamamoto, K. Yamamura, Y. Muramaatsu
{"title":"Prototype double-sided silicon sensor (DSSS) for SDC detector","authors":"T. Ohsugi, Y. Iwata, H. Ohyama, M. Okada, T. Ohmoto, Y. Unno, T. Kohriki, N. Tamura, H. Miyata, M. Higuchi, K. Niwa, M. Nakamura, Y. Nagashima, M. Daigo, A. Murakami, S. Kobayashi, K. Yamamoto, K. Yamamura, Y. Muramaatsu","doi":"10.1109/NSSMIC.1992.301201","DOIUrl":null,"url":null,"abstract":"A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p/sup +/ channel between n/sup +/ strips. The readout capacitance was minimized by making a narrow strip on the p/sup +/ side and by inserting a wide isolation p/sup +/ channel in the n/sup +/ strip side. The capacitance is measured to be 0.8 pF/cm on the p/sup +/ strip side and 1.13 pF/cm on the n/sup +/ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width.<<ETX>>","PeriodicalId":447239,"journal":{"name":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1992.301201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p/sup +/ channel between n/sup +/ strips. The readout capacitance was minimized by making a narrow strip on the p/sup +/ side and by inserting a wide isolation p/sup +/ channel in the n/sup +/ strip side. The capacitance is measured to be 0.8 pF/cm on the p/sup +/ strip side and 1.13 pF/cm on the n/sup +/ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width.<>
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