Contact resistance of Sn-film and Sn-bulk investigated by microscopic analysis

A. Omura, M. Fukuta, K. Miyake, T. Kondo, M. Onuma
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引用次数: 2

Abstract

In order to evaluate the relation between the contact resistance and the microscopic property of electrical contacts, we have proposed the visualization method by means of conductive-AFM. In this study, we mechanically fabricated indentations on Sn-coated-Cu and Sn-bulk plates, and investigated by I-V mapping method. It was found that the conductive points were distributed inside the indentation scar, and the number of conductive points dominate the total contact resistance. Furthermore, we assumed each conductive point as a-spot and attempted to represent the contact resistance from the experimental values and the Holm formula.
用显微分析方法研究了锡膜和锡体的接触电阻
为了评估接触电阻与电触点微观性能之间的关系,我们提出了导电afm的可视化方法。在本研究中,我们在镀锡铜和大块锡板上机械制造了压痕,并通过I-V映射方法进行了研究。结果表明,导电点分布在压痕疤痕内部,且导电点的数量占总接触电阻的主导地位。此外,我们假设每个导电点为a点,并尝试用实验值和Holm公式表示接触电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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