Controlling growth of aligned carbon nanotube bundles arrays with microwave plasma CVD

2006 19th International Vacuum Nanoelectronics Conference Pub Date : 2006-07-01 DOI:10.1109/IVNC.2006.335292

J.B. Liu, S. Deng, N. Xu, Jun Chen, Y. Ke

引用次数: 0

Abstract

A method was employed to improve the growth condition of carbon nanotube (CNT) in microwave plasma CVD system. Plasma etching on silicon substrates was avoided effectively. CNT bundles arrays were synthesized and the CNTs were vertical to the substrate

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微波等离子体CVD控制碳纳米管束阵列生长

采用一种改善微波等离子体气相沉积系统中碳纳米管生长条件的方法。有效地避免了硅衬底上的等离子体刻蚀。合成了垂直于衬底的碳纳米管束阵列

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 19th International Vacuum Nanoelectronics Conference

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