Balanced optimization of 1.31 /spl mu/m tunnel-junction VCSELs

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259042

J. Piprek, V. Jayaraman, M. Mehta, J. Bowers

引用次数: 2

Abstract

A hybrid approach that combines the advantages of GaAs mirrors and InP active layers in InP/GaAs wafer bonded 1.31 /spl mu/m VCSELs is described. This novel device concept features intra-cavity ring contacts, five strain-compensated AlGaInAs quantum wells, and an AlInAs/InP tunnel junction in order to reduce absorption by p-doped layers. The tunnel junction is literally confined forming an aperture for current injection and wave guiding. A self-consistent VCSEL simulation software is employed in order to analyze and optimize the internal device physics.

查看原文本刊更多论文

1.31 /spl mu/m隧道结VCSELs的平衡优化

本文描述了一种结合了GaAs镜面和InP有源层优点的混合方法，用于InP/GaAs晶圆键合1.31 /spl mu/m VCSELs。这种新颖的器件概念具有腔内环接触，五个应变补偿AlGaInAs量子阱和AlInAs/InP隧道结，以减少p掺杂层的吸收。隧道结实际上被限制形成一个孔径，用于电流注入和导波。采用自洽式VCSEL仿真软件对器件内部物理特性进行分析和优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

自引率

0.00%

发文量