T. N. T. Do, Mikael Hörberg, S. Lai, Sven-Henrik Wollersjo, Daniel Johansson, H. Zirath, D. Kuylenstierna
{"title":"7–13 GHz MMIC GaN HEMT Voltage-Controlled-Oscillators (VCOs) for satellite applications","authors":"T. N. T. Do, Mikael Hörberg, S. Lai, Sven-Henrik Wollersjo, Daniel Johansson, H. Zirath, D. Kuylenstierna","doi":"10.23919/EUMIC.2017.8230699","DOIUrl":null,"url":null,"abstract":"This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7–13 GHz with phase noise better than −125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7–13 GHz with phase noise better than −125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.