Laser Atom Probe Tomography: some applications

2006 19th International Vacuum Nanoelectronics Conference Pub Date : 2006-07-17 DOI:10.1109/IVNC.2006.335352

D. Blavette, E. Cadel, D. Mangelinck, K. Hoummada, R. Lardé, F. Vurpillot, B. Gault, A. Vella, P. Pareige, J. Houard, B. Deconihout

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Abstract

Laser atom probe tomography was used to investigate the inter-diffusive reactions at the silicon-nickel interface. The early stages of formation of a NiSi silicide was studied. The addition of Pt was shown to increase the temperature of formation of the high resistivity NiSi2 phase by approximately 150 degC

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激光原子探针层析成像:一些应用

采用激光原子探针层析成像技术研究了硅-镍界面的扩散反应。研究了NiSi硅化物形成的早期阶段。Pt的加入使高电阻率NiSi2相的形成温度提高了约150℃

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2006 19th International Vacuum Nanoelectronics Conference

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