Quantum Capacitance and Fermi Level Change in Graphene nanoribbons due to Gas Sensing

F. Rahman, Md. Saidur Rahman, Rubab Ahmmed, Md. Hazrat Ali
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Abstract

Here we used semiempirical computations to examine the property of nanoribbon of Graphene as a gas sensor with interaction of H2O gas molecule for both pure and defective GNRs which has been generated in Atomistix Toolkit (ATK) software. Density of States GNR before and after the interaction is shown in a (DOS) diagram with gas particles was discovered to be different which has been observed in MATLAB software. It's vital to look at the quantum capacitance when examining Graphene’s electrical properties. So, this study looked at change in quantum capacitance and Fermi Level of Graphene before and after gas sensing and the results were produced with necessary equations. Using a three-electrode electrochemical setup, we are able to directly quantify Graphene's quantum capacitance as a function of gate potential. If Graphene is used in a highly sensitive capacitive circuit, the change in Fermi energy was determined from experimental data of changed Density of States (DOS). Although this research has some limitations and future scopes, we can propose that the change in Fermi Energy level can be approximately 9.5 eV with respect to the quantum capacitance of fabricated Graphene interacting with H2O which is used as a MOSFET in this work.
气敏石墨烯纳米带的量子电容和费米能级变化
本文采用半经验计算的方法,研究了在Atomistix Toolkit (ATK)软件中生成的纯gnr和缺陷gnr中,石墨烯纳米带作为H2O气体分子相互作用的气体传感器的性能。在与气体粒子相互作用的(DOS)图中,发现相互作用前后的态密度GNR不同,并在MATLAB软件中进行了观察。在研究石墨烯的电性能时,观察量子电容是至关重要的。因此,本研究考察了气敏前后石墨烯的量子电容和费米能级的变化,并得出了必要的方程。使用三电极电化学装置,我们能够直接量化石墨烯的量子电容作为门电位的函数。如果石墨烯用于高灵敏度电容电路,则可以通过改变态密度(DOS)的实验数据来确定费米能量的变化。虽然这项研究有一定的局限性和未来的范围,但我们可以提出,相对于制造的石墨烯与水相互作用的量子电容,费米能级的变化可以约为9.5 eV,在这项工作中用作MOSFET。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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