{"title":"Resistive Switching Behavior of RF Sputtered Calcium Copper Titanate Thin Films with Various Annealing Approach","authors":"N. Tripathy, S. Ghosh, D. Pradhan, J. Kar","doi":"10.1109/EDKCON.2018.8770394","DOIUrl":null,"url":null,"abstract":"Calcium copper titanate (CCTO) thin films were deposited on p-Si (100) substrates by RF magnetron sputtering technique. In order to improve the crystalline properties and to promote the phase formation, post-deposition annealing has been carried out by 3 different type of technique namely; conventional, rapid thermal and sequential annealing. All films have shown the evolution of CCTO peak in XRD pattern confirming the phase formation at 950 °C. Conventionally annealed films have shown better crystalline properties with lower FWHM. Al/CCTO/Si metal oxide semiconductor (MOS)structures were fabricated for electrical measurements. All films have shown bipolar resistive switching behavior with the sweep of bias voltage. Conventionally annealed film has shown good on/off ratio of 826 as compared to other samples. Double logarithmic plots of current-voltage behavior have depicted space charge limited conduction in all the films.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON.2018.8770394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Calcium copper titanate (CCTO) thin films were deposited on p-Si (100) substrates by RF magnetron sputtering technique. In order to improve the crystalline properties and to promote the phase formation, post-deposition annealing has been carried out by 3 different type of technique namely; conventional, rapid thermal and sequential annealing. All films have shown the evolution of CCTO peak in XRD pattern confirming the phase formation at 950 °C. Conventionally annealed films have shown better crystalline properties with lower FWHM. Al/CCTO/Si metal oxide semiconductor (MOS)structures were fabricated for electrical measurements. All films have shown bipolar resistive switching behavior with the sweep of bias voltage. Conventionally annealed film has shown good on/off ratio of 826 as compared to other samples. Double logarithmic plots of current-voltage behavior have depicted space charge limited conduction in all the films.