Multileveled tunable silicon grating array bonded on large scale integration substrate by polymers

Tomohiro Suzuki, Chernroj Sawasdivorn, Takashi Sasaki, H. Matsuura, K. Hane
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引用次数: 0

Abstract

Abstract. A multileveled tunable silicon grating array is designed and fabricated on a large-scale-integration (LSI) substrate. The grating consists of 250 single crystalline silicon ribbons of 260 nm in thickness, 400  μm in length, and 10  μm in period. The LSI substrate generates voltages to vary the heights of respective grating ribbons addressed by digital signal input. Each grating ribbon is attracted by an electrostatic force generated by 6-bit applied voltage in the range from 0 to 5 V. In the fabrication, the LSI substrate and a silicon-on-insulator wafer are bonded by the two kinds of polymers. A photosensitive polyimide polymer is used for patterning the bonding pads and also for bonding the wafers at the pressure of 0.25 MPa and the temperature of 350°C. Another epoxy polymer fills the space underneath the grating ribbons for subsequent process, which is finally removed by sacrificial etching to make the grating ribbons freestanding. The tunability of the grating is examined experimentally under the basic operation conditions.
多能级可调谐硅光栅阵列用聚合物键合在大规模集成衬底上
摘要在大规模集成电路(LSI)衬底上设计并制作了一种多电平可调谐硅光栅阵列。该光栅由250条厚度为260 nm、长度为400 μm、周期为10 μm的单晶硅带组成。LSI衬底产生电压以改变由数字信号输入寻址的各自光栅带的高度。每个光栅带被施加在0到5v范围内的6位电压所产生的静电力所吸引。在制造过程中,LSI衬底和绝缘体上硅晶片由这两种聚合物结合。在0.25 MPa的压力和350℃的温度下,光敏聚酰亚胺聚合物用于键合垫的图像化,也用于键合晶圆。另一种环氧聚合物填充光栅带下面的空间,用于后续工艺,最后通过牺牲蚀刻去除,使光栅带独立。在基本工作条件下,对光栅的可调性进行了实验研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
0.60
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