Research on Two-dimensional quasi-SJ device with step-doping P-pillar

Abstract

In this paper, a new quasi-Super Junction Lateral double-diffused-metal-oxide-semiconductor (SJ LDMOS) with step doping P-pillar was proposed. Because the depletion from the source side to the drain side is enhanced in the drift region, the doping concentrations in the P-pillar are decreased reversely to achieve charge balance and optimize the bulk electric field. The breakdown voltage and on-resistance of the new structure are investigated through the simulation, at the same time, the other key parameters were simulated and analyzed. Simulation results show that the trade-off between the breakdown voltage and the on-resistance is significantly improved due to bulk field optimization from the step doping in the P-pillar.