Tunnel FETs with tunneling normal to the gate

Abstract

Summary form only given. In this talk, I will review some of the recent development of tunnel field effect transistors (TFETs) at Notre Dame [1-8]. Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve I_on/I_off > 10³ with I_on > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstrated I_on/I_off ~ 10⁶, I_on ~ 180 uA/um, separately, based on III-V heterostructures. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics. More recently, we have started to investigate 2D crystal based TFETs for their promises to realize ultrascaled electronic switches.