In0.52Al0.48As Based Single Photon Avalanche Diodes with Multiple M-Layers for High-Efficiency and Fast Temporal Responses

Abstract

Multiple multiplication-layers SPADs with excellent performances in terms of high-efficiency (>74%), neat impulse response time (101ps), and short hold-off time (83ns@<1% afterpulsing) can be achieved simultaneously with a simple passive quenching circuit under gated-mode operations.