W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW design

Abstract

In this paper we report on the development of W-band MMIC power amplifiers using 0.1 /spl mu/m AlInAs-GaInAs-InP HEMT technology and finite-ground coplanar waveguide (FGCPW) designs. Two single-stage single-ended W-band MMICs using 150 /spl mu/m and 250 /spl mu/m wide HEMTs were designed, fabricated and tested. The results show that the small signal performance of the MMIC using the 150 /spl mu/m wide HEMT has a linear gain of more than 12 dB at 94 GHz. The corresponding amplifier exhibits an output power of 13.8 dBm with a power-added efficiency of 23%. The MMIC using the 250 /spl mu/m wide HEMT demonstrates 9 dB linear gain and the amplifier has a maximum output power of 16.7 dBm with 17.5% power added efficiency at 94 GHz. These power amplifiers are the first ever reported using a CPW configuration at this frequency.