A new spin on electronics - spintronics

Abstract

This paper describes about the discovery of the giant magnetoresistance effect in magnetic multilayers in 1998 and the subsequent development of sensors based on it and the introduction of a new nonvolatile magnetic memory based on a spin dependent tunneling structure that potentially can be a universal replacement for existing semiconductor memories both volatile and nonvolatile. The development of the new field of spin electronics or spintronics is also discussed.