{"title":"Reduced Capacitor Size and On-State Losses in Advanced MMC Submodule Topologies","authors":"Christopher Dahmen, R. Marquardt","doi":"10.23919/EPE20ECCEEurope43536.2020.9215722","DOIUrl":null,"url":null,"abstract":"Progress of high power Modular Multilevel Converters (MMC) is of prime importance for many future applications [1]–[5]. Further reduction of power losses and smaller foot-print of the converters requires advanced submodule topologies, well adapted to SiC-power semiconductors and the operating conditions in MMC. The high potential of these measures is investigated and explained using analytical methods – providing general insight. Numerical results, based on commercially available Si- and SiC-modules are presented, demonstrating the essential improvements compared to the state-of-the-art.","PeriodicalId":241752,"journal":{"name":"2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Progress of high power Modular Multilevel Converters (MMC) is of prime importance for many future applications [1]–[5]. Further reduction of power losses and smaller foot-print of the converters requires advanced submodule topologies, well adapted to SiC-power semiconductors and the operating conditions in MMC. The high potential of these measures is investigated and explained using analytical methods – providing general insight. Numerical results, based on commercially available Si- and SiC-modules are presented, demonstrating the essential improvements compared to the state-of-the-art.