Correlation between Near-Field Scan Immunity and Radiated Susceptibility at Integrated Circuit Level

A. Boyer, N. Nolhier, F. Caignet, S. Dhia
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Abstract

Near-Field Scan Immunity (NFSI) is a powerful technique to identify root-cause of failures produced during radiated immunity tests at IC level. However, a prediction method of the radiated immunity level from NFSI results is still missing. Such a method would help designers to anticipate risks of radiated immunity non-compliance after a near-field scan campaign. This paper presents the equivalence between far-field and near-field coupling on an electrically short interconnected in order to derive an estimator of IC radiated susceptibility in TEM/GTEM cell from NFSI. This estimator is tested and validated on near-field scan results on a bandgap reference. Moreover, the proposed approach relies on calibrated injection probes. As no technical specification defines a standard calibration method, this paper addresses also this issue.
集成电路级近场扫描抗扰度与辐射磁化率的相关性研究
近场扫描抗扰度(NFSI)是一种强大的技术,可以识别IC级辐射抗扰度测试中产生故障的根本原因。然而,目前还没有一种基于NFSI结果的辐射免疫水平预测方法。这种方法将有助于设计人员在近场扫描运动后预测辐射免疫不合规的风险。本文提出了电短互连上远场和近场耦合的等效性,以便从NFSI中得到TEM/GTEM电池中IC辐射磁化率的估计。该估计器在一个带隙参考的近场扫描结果上进行了测试和验证。此外,所提出的方法依赖于校准的注入探针。由于没有技术规范定义标准的校准方法,本文也讨论了这个问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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