Silicon Photonic Broadband Suspended Directional Coupler

H. Sattari, A. Takabayashi, Yu Zhang, N. Quack
{"title":"Silicon Photonic Broadband Suspended Directional Coupler","authors":"H. Sattari, A. Takabayashi, Yu Zhang, N. Quack","doi":"10.1109/omn.2019.8925298","DOIUrl":null,"url":null,"abstract":"We demonstrate a broadband Silicon Photonic directional coupler that is entirely suspended in air. The device has been fabricated in a simplified Silicon Photonics process based on the standard IMEC ISIPP 50G platform, combined with custom post-processing including an HF vapor release step. The coupler exhibits a 1 dB bandwidth of35 nm at $\\lambda=1550nm,$ and an insertion loss of 0.5 dB at 1560 nm, confirmed experimentally. With an extinction ratio of 25 dB at 1550 nm and a compact footprint of $\\sim 30\\times 20\\mu m^{2}$, the coupler can serve as basis for a new generation of compact standard Silicon Photonic MEMS library components.","PeriodicalId":353010,"journal":{"name":"2019 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/omn.2019.8925298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We demonstrate a broadband Silicon Photonic directional coupler that is entirely suspended in air. The device has been fabricated in a simplified Silicon Photonics process based on the standard IMEC ISIPP 50G platform, combined with custom post-processing including an HF vapor release step. The coupler exhibits a 1 dB bandwidth of35 nm at $\lambda=1550nm,$ and an insertion loss of 0.5 dB at 1560 nm, confirmed experimentally. With an extinction ratio of 25 dB at 1550 nm and a compact footprint of $\sim 30\times 20\mu m^{2}$, the coupler can serve as basis for a new generation of compact standard Silicon Photonic MEMS library components.
硅光子宽带悬浮定向耦合器
我们展示了一种完全悬浮在空气中的宽带硅光子定向耦合器。该器件是基于标准IMEC ISIPP 50G平台的简化硅光子学工艺制造的,并结合了包括HF蒸汽释放步骤在内的定制后处理。实验证实,该耦合器在$\lambda=1550nm,$处的带宽为1 dB,为35 nm,在1560 nm处的插入损耗为0.5 dB。该耦合器在1550 nm处的消光比为25 dB,占地面积为$\sim 30\times 20\mu m^{2}$,可作为新一代紧凑标准硅光子MEMS库元件的基础。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信