Behavioral modelling of a 4th order LP ΣΔ modulator-towards the design of a hybrid proposal

J. G. García-Sánchez, D. Calderón-Preciado, F. Sandoval-Ibarra, J. M. Rosa
{"title":"Behavioral modelling of a 4th order LP ΣΔ modulator-towards the design of a hybrid proposal","authors":"J. G. García-Sánchez, D. Calderón-Preciado, F. Sandoval-Ibarra, J. M. Rosa","doi":"10.1109/LASCAS.2014.6820297","DOIUrl":null,"url":null,"abstract":"Hybrid ΣΔ modulator has the property of take advantage of the capabilities of CT and DT architectures and is thus very effective in the cascade approach. In this paper, we show the behavioral simulation of ΣΔ modulators in SIMSIDES. A set of experiments based on models for analyzing the overall performance of SC ΣΔ modulators were used in order to translate design considerations into a set of values such that the design at transistor level be established by the desired performance of the proposed architecture. This design methodology is not the most accurate but it allows the designer to get a general comprehension of the system under design, a comprehension at the highest level of abstraction. The system under study is a cascade 4th order hybrid ΣΔ modulator, from which the second stage is a 2nd order Low-Pass (LP) DT ΣΔ modulator. The ideal behavioral performance of the DT modulator is used as vehicle to show how non-idealities must be taken into account, and also how to translate design considerations into a set of physical values for designing building blocks at transistor level.","PeriodicalId":235336,"journal":{"name":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 5th Latin American Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2014.6820297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Hybrid ΣΔ modulator has the property of take advantage of the capabilities of CT and DT architectures and is thus very effective in the cascade approach. In this paper, we show the behavioral simulation of ΣΔ modulators in SIMSIDES. A set of experiments based on models for analyzing the overall performance of SC ΣΔ modulators were used in order to translate design considerations into a set of values such that the design at transistor level be established by the desired performance of the proposed architecture. This design methodology is not the most accurate but it allows the designer to get a general comprehension of the system under design, a comprehension at the highest level of abstraction. The system under study is a cascade 4th order hybrid ΣΔ modulator, from which the second stage is a 2nd order Low-Pass (LP) DT ΣΔ modulator. The ideal behavioral performance of the DT modulator is used as vehicle to show how non-idealities must be taken into account, and also how to translate design considerations into a set of physical values for designing building blocks at transistor level.
四阶LP ΣΔ调制器的行为建模——迈向混合方案的设计
混合ΣΔ调制器具有利用CT和DT架构能力的特性,因此在级联方法中非常有效。在本文中,我们展示了SIMSIDES中ΣΔ调制器的行为模拟。一组基于SC ΣΔ调制器整体性能分析模型的实验被用于将设计考虑转化为一组值,从而使晶体管级的设计能够根据所提出的架构的期望性能来建立。这种设计方法并不是最准确的,但它可以让设计师对所设计的系统有一个大致的理解,这是一种最高抽象层次的理解。所研究的系统是级联四阶混合ΣΔ调制器,其中第二级是二阶低通(LP) DT ΣΔ调制器。DT调制器的理想行为性能被用作展示必须如何考虑非理想性的载体,以及如何将设计考虑转化为晶体管级设计构建块的一组物理值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信