Magneto-conduction in strained nano-scaled pMOSFETs

Abstract

We have measured gate current components from the axis perpendicular-to-the-surface. The measured channel magneto-conductance shows also a pronounced magnetic asymmetry, which suggests the channel current is flowing into different crystallographic orientations with different effective masses and hole mobilities. By monitoring the different crystallographic components of the hole flow we have enhanced the understanding of the physics for Si-oxide interface charge transfer and channel conductance in low-dimensional semiconductor devices.