{"title":"A spatially reduced temporal model for hysteretic thin film electroluminescent devices","authors":"J. Jarem, V.P. Singh","doi":"10.1109/SSST.1988.17098","DOIUrl":null,"url":null,"abstract":"A temporal model is developed which describes hysteresis, the transient and the steady-state values of the interface state charge, and the trapped bulk charge in an AC thin-film electroluminescent device. A fast and efficient numerical procedure which calculates the steady-state hysteretic state of a ZnS:Mn thin-film device is developed for the model. Graphs of device current and luminance which results from the model are given. The hysteretic luminance-voltage curve calculated from the model matches an actual experimental curve for reasonable values of device parameters.<<ETX>>","PeriodicalId":345412,"journal":{"name":"[1988] Proceedings. The Twentieth Southeastern Symposium on System Theory","volume":"185 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1988] Proceedings. The Twentieth Southeastern Symposium on System Theory","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSST.1988.17098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A temporal model is developed which describes hysteresis, the transient and the steady-state values of the interface state charge, and the trapped bulk charge in an AC thin-film electroluminescent device. A fast and efficient numerical procedure which calculates the steady-state hysteretic state of a ZnS:Mn thin-film device is developed for the model. Graphs of device current and luminance which results from the model are given. The hysteretic luminance-voltage curve calculated from the model matches an actual experimental curve for reasonable values of device parameters.<>