Formation of diode detectors by nanosecond laser irradiation of CdTe-In interface from the semiconductor side

Abstract

We suggest the principally improved technique of the laser-induced doping by irradiation of the In/CdTe structures from the CdTe side with YAG:Nd laser pulses (λ = 1064 nm, τ = 8 ns). The computer simulation of laser heating and temperature calculations were used to choose the optimal regimes for achieving the effective In doping of thin and thicker CdTe layers near the CdTe-In interface under laser irradiation through the CdTe bulk. The formed M-p-n In/CdTe/Au diodes were tested by electrical and spectral measurements. The diode detectors showed sharp rectification with low leakage current and good energy resolution.