Interband transition in surface delta-doped GaAs studied by photo-reflectance

Abstract

In this paper we present the study on the surface doping behavior of Si on the GaAs [100] surface by using modulated photo-reflection spectroscopy technique at room temperature. With the envelope wave function model combined with experimental interband transition energy in the delta-doping induced potential the highest carrier concentration in the surface doping GaAs sample is obtained around 1/spl times/10/sup 14/ cm/sup -2/.