15.9 An integrated optical physically unclonable function using process-sensitive sub-wavelength photonic crystals in 65nm CMOS

Xuyang Lu, Lingyu Hong, K. Sengupta
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引用次数: 10

Abstract

Physical unclonable function (PUF) is regarded as an emerging solution for reliable cryptography. Rather than storing secret keys in memories, the information of a PUF is extracted through amplification of the physically uncontrollable process variations and therefore, can uniquely authenticate each die to counteract counterfeit, piracy or sabotage. Classically, PUF architectures have exploited process variations affecting transistor-level active device performances such as process-dependent gate delays and interconnect delays, SRAM and inverter maximum gain points, and ring oscillator frequencies [1]–[6]. While active device variations have been exploited to generate PUF signatures, they are susceptible to noise, external perturbations and aging. Since the resultant process variant responses are typically normally distributed, to spread the variance of the distribution and decrease the number of challenges near the unstable decision region, we propose a method to exploit passive variations within the chip in addition to active device variations. While lithographic variations in the smallest metal features may not influence the electrical performance drastically, their effects can be amplified at optical frequencies with wavelengths comparable to the minimal feature size. In fact, before the concept of electronic PUFs were demonstrated in silicon, one of the first implementations of strong PUFs was demonstrated in the optical domain, which exploited speckle-patterns of a random scattering medium in the presence of a laser light. In this work, we present the first CMOS-based opto-active PUF, which not only utilizes the active variations, but also amplifies the lithographic variation of passive metal structures through process-sensitive copper-based CMOS integrated photonic crystals. The measured CMOS chip achieves a native Inter-PUF/Intra-PUF Hamming Distance (HD) ratio of 198X without any post-operation.
15.9采用65nm CMOS制程敏感亚波长光子晶体的集成光学物理不可克隆函数
物理不可克隆函数(PUF)被认为是一种新兴的可靠加密解决方案。PUF的信息不是存储在存储器中,而是通过放大物理上不可控的过程变化来提取的,因此,可以唯一地验证每个模具,以对抗假冒,盗版或破坏。传统上,PUF架构利用了影响晶体管级有源器件性能的工艺变化,如工艺相关的门延迟和互连延迟、SRAM和逆变器最大增益点以及环形振荡器频率[1]-[6]。虽然有源器件变化已被利用来产生PUF签名,但它们容易受到噪声、外部扰动和老化的影响。由于产生的过程变量响应通常是正态分布的,为了扩散分布的方差并减少不稳定决策区域附近的挑战数量,我们提出了一种方法,除了利用主动器件变化之外,还利用芯片内的被动变化。虽然最小金属特征的光刻变化可能不会显著影响电性能,但它们的影响可以在与最小特征尺寸相当的波长的光学频率上被放大。事实上,在电子puf的概念在硅中被证明之前,强puf的第一个实现是在光学领域被证明的,它利用了激光存在下随机散射介质的散斑模式。在这项工作中,我们提出了第一个基于CMOS的光源PUF,它不仅利用了有源变化,而且通过工艺敏感的铜基CMOS集成光子晶体放大了无源金属结构的光刻变化。所测CMOS芯片无需任何后处理即可实现原生puf / puf内汉明距离(HD)比198X。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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