An efficient 210GHz compact harmonic oscillator with 1.4dBm peak output power and 10.6% tuning range in 130nm BiCMOS

Abstract

A compact 210GHz harmonic oscillator is presented. By utilizing a device-centric bottom-up design methodology as well as the return-path gap coupler and self-feeding structure, the harmonic power generation is optimized. Fabricated with a 130nm SiGe BiCMOS process, the oscillator core occupies only 290×95 μm2 area. It achieves a 1.4dBm peak output power and 2.4% peak DC-to-RF efficiency. The output frequency can be tuned from 197.5GHz to 219.7GHz. The phase noise is measured to be -87.5dBc/Hz at 1MHz offset.