A model of the spin-dependent skew scattering in semiconductors

Y. Turkin, A. Zakharov
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Abstract

The control of the spin Hall Effect with the polarization degree is an emerging strategy for including new functionality in spintronic devices. The dependence of spin hall conductance on spin polarization is reported. It is shown that skew scattering term depends on electrons temperature and spin polarization. We use the spherical harmonics method to calculate the dependence of the spin Hall angle on energy shift in the spin-polarized paramagnetic semiconductor. Transport coefficients obtained from the density matrix kinetic equation and spherical harmonics expansion. The skew scattering coefficient is computed numerically. It is shown that spin Hall coefficients nonlinearly depend on the degree of spin polarization. The results indicate that the spin Hall angle can nonlinearly depend on the spin polarization of the electron gas. This feature opens new way to control spin transport in paramagnetic materials like semiconductors or heavy metals.
半导体中与自旋相关的偏斜散射模型
利用极化度来控制自旋霍尔效应是一种新兴的自旋电子器件新功能的控制策略。报道了自旋霍尔电导与自旋极化的关系。结果表明,偏斜散射项与电子温度和自旋极化有关。利用球谐波法计算了自旋极化顺磁半导体中自旋霍尔角与能量位移的关系。由密度矩阵动力学方程和球谐展开得到输运系数。对斜散射系数进行了数值计算。结果表明,自旋霍尔系数与自旋极化程度呈非线性关系。结果表明,自旋霍尔角与电子气体的自旋极化呈非线性关系。这一特性为控制半导体或重金属等顺磁性材料中的自旋输运开辟了新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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