A DC-7 GHz Small-Area Distributed Amplifier Using 5-port Inductors in a 180nm Si CMOS Technology

Abstract

This paper proposes a novel small-area distributed amplifler (DA), which utilizes two 5-port inductors to replace eight inductors. The DA is fabricated using a standard 180 nm CMOS process with 6 metal layers. The layout area of DA is 0.33 mm2. It is about 50 % as large as conventional DAs, and it has power gain of 6.3 dB and noise figure of 6 dB at DC-7 GHz.