Record efficiencies above 21% for MIS-contacted diffused junction silicon solar cells

Abstract

High-efficiency solar cells obtained by a simple cost-effective manufacturing process are required for a drastic reduction of the costs of solar electricity. In this paper, an improved and yet simple processing sequence for highly efficient MIS-contacted diffused n/sup +/p junction (MIS-n/sup +/p) silicon solar cells is presented. The process is characterised by: (i) formation of a metal-insulator-semiconductor (MIS) contact on an n/sup +/-diffused emitter; (ii) aluminium metallisation for front and rear electrodes; and (iii) low-temperature surface passivation by PECVD silicon nitride. For MIS-n/sup +/p solar cells with the front grid defined by Al evaporation through a shadow mask, efficiencies of up to 20.6% have been obtained. Furthermore, mask-free metallised cells with a mechanically grooved front surface have been fabricated. These cells have reached a confirmed efficiency of 21.1%, the highest value to date reported for MIS-n/sup +/p silicon solar cells.