A Novel Low Power Dynamic Memory Architecture Using Single Supply 3T Gain Cell

M. Nagarjuna, G. Mamatha, S. Rajendar
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引用次数: 2

Abstract

Design of memory consists of two different approaches namely, static random access memory (SRAM) and dynamic random access memory (DRAM). Traditionally SRAM has been used to design memory. The major problem to design a memory using SRAM is area, power and delay. The memories designed with SRAM will result in high power, high delay and consumes more area. To overcome this problem, a DRAM cell is designed witch results in low power, low area and low delay. There are certain disadvantages with these two designs, and to overcome limitations a new gain cell is designed in this paper. A 2Kb dynamic memory architecture has been designed using the proposed modified 3T gain cell. An architecture is designed with features of high speed, low power, and low delay. The dyanmic memory architecture is implemented using Cadence Analog Design Environment. The proposed and conventional dynamic memory architectures were compared in terms of power and delay for variable supply voltages and temperatures.
采用单电源3T增益单元的新型低功耗动态存储器结构
存储器的设计包括两种不同的方法,即静态随机存取存储器(SRAM)和动态随机存取存储器(DRAM)。传统上,SRAM被用来设计存储器。使用SRAM设计存储器的主要问题是面积、功耗和延迟。采用SRAM设计的存储器将导致高功耗、高延迟和更大的面积消耗。为了克服这一问题,设计了一种低功耗、低面积、低延迟的DRAM单元。这两种设计都有一定的缺点,为了克服这些缺点,本文设计了一种新的增益单元。采用改进后的3T增益单元设计了2Kb动态存储器结构。设计了一种具有高速、低功耗、低时延特点的体系结构。动态存储器架构是在Cadence模拟设计环境下实现的。在可变电源电压和温度下,比较了所提出的动态存储架构和传统的动态存储架构的功耗和延迟。
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