Inspection of electrical interconnections within power ICs via magneto-optical imaging

F. W. Dietachmayr, Patrick A. Hölzl, B. Zagar, M. Nelhiebel
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Abstract

During their lifetime, power electronic components have to endure several million cycles of thermo-mechanical stress. In this context, the electrical interconnections between the die and the output pins are crucial. Usually, bond wires with diameters ranging from 400 μm to less than 50 μm are used to establish the electrical interconnections. Typically, due to the small diameters, redundant wires are necessary in order to guarantee the current-carrying rating of the device. In this particular case, commonly used electrical tests are not able to detect the loss of single wires. However, missing or not connected bond wires will result in a different magnetic field distribution surrounding the device. This paper presents a new measurement method based on a magneto-optical sensor to detect missing bond wires in a power MOSFET chip via magnetic field imaging. The Faraday effect is utilized, which enables us to resolve magnetic flux densities down to 127 nT with a spatial resolution of approximately 21.6 μm.
通过磁光成像检查电源集成电路内的电气互连
在其使用寿命期间,电力电子元件必须承受数百万次的热机械应力循环。在这种情况下,芯片和输出引脚之间的电气互连是至关重要的。通常采用直径为400 μm ~小于50 μm的键合线来建立电气互连。通常,由于直径小,为了保证器件的载流额定值,需要冗余导线。在这种特殊情况下,常用的电气测试无法检测到单线的损耗。然而,缺少或未连接的键合线将导致设备周围的磁场分布不同。本文提出了一种基于磁光传感器的磁场成像检测功率MOSFET芯片中缺失键线的新方法。利用法拉第效应,我们能够以大约21.6 μm的空间分辨率分辨低至127 nT的磁通密度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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