{"title":"An Asynchronous Auto-biasing Circuit for Wearable Electrochemical Sensors","authors":"M. Douthwaite, P. Georgiou","doi":"10.1109/BIOCAS.2018.8584833","DOIUrl":null,"url":null,"abstract":"This work presents a circuit for asynchronous, automatic biasing of a CMOS ISFET array for wearable electrochemical measurement systems. The circuit is integrated into a temperature compensated pH-to-frequency converter utilising the floating gates of an ISFET array. The work represents the first effort to address the issue of variable bias points in integrated electrochemical sensors for wearable applications, and is a low power, low transistor solution without an output voltage ripple. Designed in a 0.35flm CMOS technology, the system achieves a low power consumption of 29.72µW with a typical settling time of 0.7ms.","PeriodicalId":259162,"journal":{"name":"2018 IEEE Biomedical Circuits and Systems Conference (BioCAS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Biomedical Circuits and Systems Conference (BioCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIOCAS.2018.8584833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents a circuit for asynchronous, automatic biasing of a CMOS ISFET array for wearable electrochemical measurement systems. The circuit is integrated into a temperature compensated pH-to-frequency converter utilising the floating gates of an ISFET array. The work represents the first effort to address the issue of variable bias points in integrated electrochemical sensors for wearable applications, and is a low power, low transistor solution without an output voltage ripple. Designed in a 0.35flm CMOS technology, the system achieves a low power consumption of 29.72µW with a typical settling time of 0.7ms.