A new design for tapered-geometry high-power semiconductor optical sources

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.571625

N. Brooks, J. Sarma, I. Middlemast

引用次数: 8

Abstract

A compact model for tapered-geometry optical sources has been developed using perturbation analysis to evaluate carrier-induced changes to modal propagation constants. Results for novel, parabolically-tapered devices demonstrate their merit as high-power semiconductor laser sources.

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锥形高功率半导体光源的新设计

利用微扰分析，建立了锥形几何光源的紧凑模型，以评估载波引起的模态传播常数的变化。结果表明，新型抛物线锥形器件具有高功率半导体激光源的优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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