A high efficiency full-wave rectifier in standard CMOS Technology

Abstract

In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.