GaN/InGaN/GaN disk-in-wire light emitters: polar vs. nonpolar orientations

Abstract

In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transition parameters were then incorporated into a TCAD LED simulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.