A Study of Temperature Distribution in SOI-Smart Power Devices in Transient Conditions by Optical Interferometry

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194478

N. Seliger, D. Pogany, C. Furbock, P. Habaš, E. Gornik, M. Stoisiek

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引用次数: 3

Abstract

Siemens Corporate Research and Development ZFE T KM6Otto-Hahn-Ring 6, D-81739 Munich, GermanyAbstract1. Introduction Silicon-On-Insulator (SOI) by Direct Wafer Bonding [1] has become an attractivetechnique for the fabrication of smart power devices. Self-heating effects in such structuresare, however, more critical compared to bulk devices due to a reduced heat removal acrossthe buried and trench oxides [2,3]. Power dissipation could cause localized temperatureincrease in the device active region, which may influence the device performance andreliability. In monolithic chip technology, the amount of heat laterally spread from the powerdevices across the sided trench oxides is also important as it may influence thecharacteristics of a nearby CMOS control circuit. In this paper we present an analysis of thetransient temperature variations inside and outside the SOI well of smart power devicesobtained by optical interferometry measurements. 2. Measurements The measurements have been carried out on trench isolated Lateral Double-diffused(LD)MOSFETs [4]. The SOI wafer structure consists of a highly doped p

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光干涉法研究soi智能功率器件瞬态温度分布

西门子企业研发ZFE T KM6Otto-Hahn-Ring 6, D-81739德国慕尼黑摘要1。采用直接晶圆键合的绝缘体上硅(SOI)技术[1]已成为制造智能功率器件的一项有吸引力的技术。然而，与本体器件相比，这种结构中的自热效应更为关键，因为通过埋藏氧化物和沟槽氧化物的热量去除减少了[2,3]。功耗可能导致器件有源区域局部温度升高，影响器件性能和可靠性。在单片芯片技术中，从功率器件穿过侧槽氧化物横向传播的热量也很重要，因为它可能影响附近CMOS控制电路的特性。本文分析了智能功率器件SOI井内外瞬态温度变化的光学干涉测量结果。2. 测量是在沟槽隔离的横向双扩散(LD) mosfet上进行的[4]。SOI晶圆结构由高掺杂p组成

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27th European Solid-State Device Research Conference

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