Untitled

Abstract

SUBSTANCE: invention relates to chemical technology of producing polycrystalline silicon by hydrogen reduction of trichlorosilane with hydrogen to silicon core bars in a waste-free mode. Method involves preparation of initial vapor-gas mixture in evaporator SiHCl 3 1 by hydrogen bubbling through a layer of trichlorosilane with molar ratio H 2 :SiHCl 3 = (3.0–3.5) :1 with its further supply to reduction reactor 2, where polycrystalline